Patent · US Active

Method for producing a nitride compound semiconductor device

US9660137B2 · kind B2 · utility

1Cited by

6References

16Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Werner Bergbauer · Windberg, DE
Philipp Drechsel · Regensburg, DE
Peter Stauss · Regensburg, DE
Patrick Rode · Regensburg, DE

Key dates

Filing date	May 28, 2014
Grant date	May 23, 2017
Priority date	—
Expiry date	May 28, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/8215
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is provided for producing a nitride compound semiconductor device. A growth substrate has a silicon surface. A buffer layer, which comprises AlxInyGa1-x-yN with 0≦x≦1, 0≦y≦1 and x+y≦1, is grown onto the silicon surface of the substrate. A semiconductor layer sequence is grown onto the buffer layer. The buffer layer includes a material composition that varies in such a way that a lateral lattice constant of the buffer layer increases stepwise or continuously in a first region and decreases stepwise or continuously in a second region, which follows the first region in the growth direction. At an interface with the semiconductor layer sequence, the buffer layer includes a smaller lateral lattice constant than a semiconductor layer of the semiconductor layer sequence adjoining the buffer layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.