Methods of forming a layer and methods of manufacturing magnetic memory devices using the same
US9660187B1 · kind B1 · utility
2Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2016 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Jul 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a layer includes providing a first insulator and a second insulator over a lower structure, generating a first ion source and a second ion source from the first insulator and the second insulator, respectively, and forming an insulating layer on the lower structure using the first ion source and the second ion source. The first and second insulators are vertically spaced apart from the lower structure and are laterally spaced apart from each other. The first insulator and the second insulator include the same material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.