Method and structure for creating cavities with extreme aspect ratios

US9663355B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Thoralf Kautzsch · Dresden, DE
• Heiko Froehlich · Radebeul, DE
• Mirko Vogt · Dresden, DE
• Maik Stegemann · Freital, DE

Key dates

• Filing date: Aug 25, 2015
• Grant date: May 30, 2017
• Expiry date: Aug 25, 2035

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C1/00047
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or substance can flow to penetrate the substrate and remove the sacrificial layer. The trench, channel or other structure can be implemented along with openings or other apertures formed in the substrate, such as proximate one or more edges of the substrate, to even more quickly disperse etch gas or some other substance within the substrate.