Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns
US9665003B2 · kind B2 · utility
2Cited by
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18Claims
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Key dates
| Filing date | Apr 28, 2014 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Apr 28, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent,
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.