Method for growing group III nitride
US9666429B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2016 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Jun 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing Group III nitride is provided, which includes the following steps. A plurality of notches separated from each other are formed at the epitaxial substrate surface via the pattering process. The plurality of notches each has at least one stepping structure with a predetermined inclination angle, wherein the stepping structure in each notch gradually descends towards the center of the corresponding notch. The Group III nitride is grown on the epitaxial substrate via epitaxy process. Wherein, the Group III nitride growing at an upper portion of the epitaxial substrate restricts the vertical growth of the Group III nitride growing at the lower portion of the epitaxial substrate, and the Group III nitride growing at the lower portion of the epitaxial substrate promotes the lateral growth of the Group III nitride growing at the upper portion of the epitaxial substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.