Methods for manufacturing a semiconductor device
US9666433B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Apr 15, 2016 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Apr 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process, poly-crystalline silicon spacers are formed on the side surfaces of the carbon-containing patterns after the hydrophilic process has been performed, and the etch target layer is patterned using the poly-crystalline silicon spacers as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.