Method of forming semiconductor device
US9666491B1 · kind B1 · utility
6Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2016 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Jun 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes following steps. Firstly, a first transistor is formed on a first surface of a substrate. Next, a thinning process is performed on the second surface of the substrate which is opposite to the first surface, to form a third surface. Then, a second transistor is formed on the third surface, in which the second transistor and the first transistor are electrically connected to each other through a through-silicon via penetrating through the first surface and the third surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.