Patent · US Active

Multi-layer metal pads

US9666546B1 · kind B1 · utility

2Cited by

2References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Manfred Schneegans · Vaterstetten, DE
Bernhard Weidgans · Bernhardswald, DE
Franziska Haering · Regensburg, DE

Key dates

Filing date	Apr 28, 2016
Grant date	May 30, 2017
Priority date	—
Expiry date	Apr 28, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/35121
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for fabricating a semiconductor device includes forming a conductive liner over a first landing pad in a first region and over a second landing pad in a second region. The method further includes depositing a first conductive material within first openings within a resist layer formed over the conductive liner. The first conductive material overfills to form a first pad and a first layer of a second pad. The method further includes depositing a second resist layer over the first conductive material, and patterning the second resist layer to form second openings exposing the first layer of the second pad without exposing the first pad. A second conductive material is deposited over the second layer of the second pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.