Patent · US Active

Manufacturing method of forming a semiconductor wafer structure

US9666555B2 · kind B2 · utility

0Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 6, 2016
Grant dateMay 30, 2017
Priority date
Expiry dateJul 6, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/07025
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor structure includes providing a first wafer including a surface, removing some portions of the first wafer over the surface to form a plurality of recesses extended over at least a portion of the surface of the first wafer, providing a second wafer, and disposing the second wafer over the surface of the first wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.