Manufacturing method of forming a semiconductor wafer structure
US9666555B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 6, 2016 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Jul 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/07025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor structure includes providing a first wafer including a surface, removing some portions of the first wafer over the surface to form a plurality of recesses extended over at least a portion of the surface of the first wafer, providing a second wafer, and disposing the second wafer over the surface of the first wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.