Semiconductor device structure and manufacturing method thereof
US9666574B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2015 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Nov 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/215
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a first transistor configured to include a first threshold voltage level. The first transistor includes a gate structure. The gate structure includes a first component including a first conductive type. A second transistor configures to include a second threshold voltage level different from the first threshold voltage level. The second transistor includes a gate structure. The gate structure includes a second component including the first conductive type. At least one extra component is disposed over the second component. The least one extra component includes a second conductive type opposite to the first conductive type. The first transistor and the second transistor are coupled such that the number of the least one extra component is determined by a desired voltage difference between the first threshold voltage level and the second threshold voltage level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.