Mechanisms for forming image-sensor device with deep-trench isolation structure

US9666624B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Jeng-Shyan Lin · Tainan, TW
• Dun-Nian Yaung · Taipei, TW
• Jen-Cheng Liu · Baoshan, TW
• Feng-Chi Hung · Kaohsiung, TW

Key dates

• Filing date: Apr 7, 2016
• Grant date: May 30, 2017
• Expiry date: Apr 7, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F71/00

Abstract

An image-sensor device is provided. The image-sensor device includes a semiconductor substrate having a front surface and a back surface, and an interconnection structure formed over the front surface. The image-sensor device also includes a radiation-sensing region in the semiconductor substrate. The image-sensor device further includes an isolation structure adjacent to the radiation-sensing region. The isolation structure includes a trench extends from the back surface, and a negatively charged film extends along an interior surface of the trench.