Semiconductor devices, methods of manufacturing thereof, and image sensor devices
US9666630B2 · kind B2 · utility
5Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2016 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Mar 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
Abstract
Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device comprises a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. The semiconductor device comprises a guard structure disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.