Semiconductor structures including metal insulator metal capacitor
US9666660B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 16, 2013 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Nov 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal insulator metal (MIM) capacitor includes a base layer and a copper bulk layer in the base layer. The MIM capacitor further includes an etch stop layer over the base layer and the copper bulk layer and an oxide-based dielectric layer over the etch stop layer. The MIM capacitor further includes a capacitor bottom layer over the oxide-based dielectric layer, an insulator layer over the capacitor bottom layer, and a capacitor top layer over the insulator layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.