RF power transistor
US9666685B2 · kind B2 · utility
0Cited by
0References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2016 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Apr 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
Abstract
A radio frequency (RF) power transistor includes a semiconductor heterostructure, a gate electrode, a drain electrode and a source electrode. The drain electrode includes an ohmic contact and a Schottky contact extending from the ohmic contact toward the gate electrode, spaced apart from the gate electrode (4) by a distance (LGD), and having a length (LEXT) being not less than 2 μm and not greater than 4 μm. A ratio of the length (LEXT) to a sum of the length (LEXT) and a distance (LGD) is greater than 0.83 and less than 0.98.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.