Yi-Wei Lien
5Patents
1h-index
7Co-inventors
36Inventor score
Filing activity: Dec 2, 2013 → Dec 20, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8999849B1 | Method of fabricating III-nitride based semiconductor on partial isolated silicon substrate | Electricity | 7 | Active |
| US10720390B2 | Ohmic metal structure for GaN device | Electricity | 1 | Active |
| US10084109B1 | Semiconductor structure for improving the gate adhesion and Schottky stability | Electricity | 1 | Active |
| US10886392B2 | Semiconductor structure for improving thermal stability and Schottky behavior | Electricity | 0 | Active |
| US9666685B2 | RF power transistor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.