Electronic device, non-volatile memorty device, and programming method
US9672920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2015 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Jun 29, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This disclosure provides a memory device. The memory device includes a plurality of memory cells and a control circuit coupled to the memory cells. The control circuit is configured to provide a first programming voltage to the memory cells; verify the memory cells against an interim level verify voltage to divide the memory cells into a first group of memory cells and a second group of memory cells according to whether the memory cells do not reach or do reach the interim level verify voltage, respectively; provide a second programming voltage to the first group of memory cells and inhibit the second group of memory cells from receiving the second programming voltage, the second programming voltage being greater than or equal to the first programming voltage; and verify the first group of memory cells and the second group of memory cells against a desired level voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.