Solid phase epitaxy of 3C—SiC on Si(001)
US9673047B2 · kind B2 · utility
1Cited by
1References
6Claims
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Key dates
| Filing date | Oct 1, 2015 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Oct 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C—SiC buffer layer on Si(001) comprising a porous buffer layer of 3C—SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.