Patent · US Active

Test structures and method of forming an according test structure

US9673115B2 · kind B2 · utility

0Cited by

0References

21Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Hans-Peter Moll · Dresden, DE
Dieter Lipp · Emden, DE
Stefan Richter · Seattle, US

Key dates

Filing date	Nov 5, 2015
Grant date	Jun 6, 2017
Priority date	—
Expiry date	Nov 6, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure provides a test structure which includes an SOI substrate having an active semiconductor layer, a buried insulating material layer, and a base substrate, wherein the active semiconductor layer is formed on the buried insulating material layer, which, in turn, is formed on the base substrate. The test structure further includes a contact which is formed on the active semiconductor layer and electrically coupled to the active semiconductor layer. Herein, the contact has a tip portion extending through the active semiconductor layer into the buried insulating material layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.