Semiconductor device with low band-to-band tunneling
US9673221B2 · kind B2 · utility
6Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2015 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Mar 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes a semiconductor device comprising an interlevel dielectric layer over a buried insulator layer over a semiconductor substrate; a source and drain in the interlevel layer; a channel between the source and drain, the channel including a first region having a first bandgap adjacent to a second region having a second bandgap, wherein the first band gap is larger than the second bandgap; and a gate over the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.