Semiconductor device including capacitor and method of fabricating the same
US9673272B2 · kind B2 · utility
12Cited by
6References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 24, 2015 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Sep 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A semiconductor device includes a lower electrode on a lower structure, a dielectric layer conformally covering a surface of the lower electrode, an upper electrode conformally covering a surface of the dielectric layer, and a barrier layer on the upper electrode. The barrier layer and the upper electrode define a space on a sidewall of the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.