Semiconductor devices including a gate core and a fin active core and methods of fabricating the same
US9673300B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2015 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Aug 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and methods of fabricating the same are provided. The methods may include forming an isolation region defining a fin active region, forming a sacrificial field gate pattern on the isolation region and forming a sacrificial fin gate pattern on the fin active region. The method may also include forming a field gate cut zone comprising a first recess exposing a surface of the isolation region and a fin active cut zone comprising a second recess exposing a surface of the fin active region, forming a fin active recess in the second recess of the fin active cut zone and forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.