Semiconductor device with non-uniform trench oxide layer
US9673314B2 · kind B2 · utility
1Cited by
8References
13Claims
0Family size
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Key dates
| Filing date | Jul 8, 2015 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Jul 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A semiconductor device includes a trench formed in an epitaxial layer and an oxide layer that lines the sidewalls of the trench. The thickness of the oxide layer is non-uniform, so that the thickness of the oxide layer toward the top of the trench is thinner than it is toward the bottom of the trench. The epitaxial layer can have a non-uniform dopant concentration, where the dopant concentration varies according to the thickness of the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.