Horizontal development bias in negative tone development of photoresist
US9678435B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2014 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Apr 10, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/705
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Aspects of the disclosed techniques relate to techniques for resist simulation in lithography. Local minimal light intensity values are determined for a plurality of sample points in boundary regions of an aerial image of a feature to be printed on a resist coating, wherein each of the local minimal light intensity values represents a minimum light intensity value for an area surrounding one of the plurality of sample points. Based on the local minimal light intensity values, horizontal development bias values for the plurality of sample points are then determined. Finally, resist contour data of the feature are determined based at least on the horizontal development bias values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.