Method of etching a porous dielectric material
US9679802B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 18, 2015 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Mar 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing interconnection lines including etching a layer of porous dielectric material forming a trench and filling the trench is provided. The etching is carried out in a plasma so as to grow, all along the etching, a protective layer on flanks of the layer of porous dielectric material. The plasma is formed from a gas formed from a first component and a second component, or a gas formed from a first component, a second component and a third component. The first component is a hydrocarbon of the CXHY type, where X is the proportion of carbon in the gas and Y the proportion of hydrogen in the gas; the second component is taken from nitrogen or dioxygen or a mixture of nitrogen and dioxygen; the third component is taken from argon or helium; and the protective layer is based on hydrocarbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.