Semiconductor structure and process for forming plug including layer with pulled back sidewall part
US9679813B2 · kind B2 · utility
8Cited by
4References
8Claims
0Family size
Assignee
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Key dates
| Filing date | May 12, 2015 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | May 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor process for forming a plug includes the following steps. A dielectric layer having a recess is formed on a substrate. A titanium layer is formed to conformally cover the recess. A first titanium nitride layer is formed to conformally cover the titanium layer, thereby the first titanium nitride layer having first sidewall parts. The first sidewall parts of the first titanium nitride layer are pulled back, thereby second sidewall parts being formed. A second titanium nitride layer is formed to cover the recess. Moreover, a semiconductor structure formed by said semiconductor process is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.