Patent · US Active

Semiconductor device having a low-adhesive bond substrate pair

US9679867B2 · kind B2 · utility

10Cited by
21References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 30, 2015
Grant dateJun 13, 2017
Priority date
Expiry dateOct 30, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1431
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a low-adhesion film, a pair of substrates, and a metal electrode. The low-adhesion film has lower adhesion to metal than a semiconductor oxide film. The pair of substrates is provided with the low-adhesion film interposed therebetween. The metal electrode passes through the low-adhesion film and connects the pair of substrates, and includes, between the pair of substrates, a part thinner than parts embedded in the pair of substrates. A portion of the metal electrode embedded in one substrate is provided with a gap interposed between the portion and the low-adhesion film on the other substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.