FinFET device and method
US9679992B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2016 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Feb 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
A fin field effect transistor (FinFET) and a method of forming the same are introduced. In an embodiment, trenches are formed in a substrate, wherein a region between adjacent trenches defines a fin. A dielectric material is formed in the trenches. A part of the substrate is doped and a region of high dopant concentration and a region of low dopant concentration are formed. Gate stacks are formed, portions of the fins are removed and source/drain regions are epitaxially grown in the regions of high/low dopant concentration. Contacts are formed to provide electrical contacts to source/gate/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.