Semiconductor device including Fin FET and manufacturing method thereof
US9680017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2015 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Sep 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a fin structure for a fin field effect transistor (FET). The fin structure includes a base layer protruding from a substrate, an intermediate layer disposed over the base layer and an upper layer disposed over the intermediate layer. The fin structure further includes a first protective layer and a second protective layer made of a different material than the first protective layer. The intermediate layer includes a first semiconductor layer disposed over the base layer, the first protective layer covers at least side walls of the first semiconductor layer and the second protective layer covers at least side walls of the first protective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.