Nickelide source/drain structures for CMOS transistors

US9680027B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Richard Kenneth Oxland · Brussels, BE
• Mark van Dal · Heverlee, BE

Key dates

• Filing date: Mar 7, 2012
• Grant date: Jun 13, 2017
• Expiry date: Mar 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A nickelide material with reduced resistivity is provided as source/drain contact surfaces in both NMOS and PMOS technology. The nickelide material layer may be a ternary material such as NiInAs, and may be formed from a binary material previously formed in the source/drain regions. The binary material may be the channel material or it may be an epitaxial layer formed over the channel material. The same ternary nickelide material may be used as the source/drain contact surface in both NMOS and PMOS transistors. Various binary or ternary channel materials may be used for the NMOS transistors and for the PMOS transistors.