Method of manufacturing semiconductor device and method of cleaning processing vessel
US9683288B2 · kind B2 · utility
1Cited by
1References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 19, 2014 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Sep 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.