Compositions and methods for pattern treatment
US9684241B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 3, 2016 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Jun 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Pattern treatment compositions comprise a block copolymer and an organic solvent. The block copolymer comprises a first block and a second block. The first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group. The second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and an aromatic group, provided that the second monomer is not styrene. Wherein: (i) the second block comprises a unit formed from a third monomer comprising an ethylenically unsaturated polymerizable group, and the second monomer and the third monomer are different; and/or (ii) the block copolymer comprises a third block comprising a unit formed from a fourth monomer comprising an ethylenically unsaturated polymerizable group. Also provided are pattern treatment methods using the described compositions. The pattern treatment compositions and methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.