Patent · US Active

Non-destructive readout ferroelectric memory as well as method of preparing the same and method of operating the same

US9685216B2 · kind B2 · utility

3Cited by

8References

31Claims

0Family size

Assignee

FUDAN UNIVERSITY · CN

Inventors

Anquan Jiang · Shanghai, CN
Jun Jiang · Nagoya, JP
Wenping Geng · Shanghai, CN
Zilong Bai · Shanghai, CN

Key dates

Filing date	Jun 26, 2015
Grant date	Jun 20, 2017
Priority date	—
Expiry date	Jun 26, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10B69/00
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A non-destructive readout ferroelectric memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory are disclosed. The ferroelectric memory comprises a ferroelectric thin film layer. The ferroelectric memory of the invention can realize a non-destructive readout by way of current, is suitable for a high density application, is simple in preparation and has a low cost.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.