Method of forming semiconductor device
US9685318B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2015 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Oct 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of forming a semiconductor device. The method can include loading a semiconductor substrate into semiconductor equipment. A base layer can be formed on the loaded semiconductor substrate by performing a base deposition process using a base source material. A first silicon layer can be formed on the base layer to a greater thickness than the base layer by performing a first silicon deposition process using a silicon source material different from the base source material. A first nitrided silicon layer can be formed by nitriding the first silicon layer using a first nitridation process. The semiconductor substrate having the first nitrided silicon layer can be unloaded from the semiconductor equipment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.