Methods for depositing silicon oxide
US9685320B2 · kind B2 · utility
475Cited by
159References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 18, 2014 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Jan 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes. Conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls. The disclosed embodiments achieve more uniform film quality as evidenced by more uniform wet etch rates and electrical properties throughout the film. The disclosed embodiments may use one or more of a relatively high deposition temperature, a relatively high RF power for generating the plasma, and/or relatively long RF plasma exposure duration during each cycle of the PEALD reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.