Manufacturing method of silicon carbide semiconductor device
US9685333B2 · kind B2 · utility
3Cited by
0References
6Claims
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Assignee
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Key dates
| Filing date | Feb 5, 2016 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Feb 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a silicon carbide semiconductor device includes grinding a back surface of a semiconductor substrate formed of silicon carbide to reduce thickness thereof and provide an altered layer that is ground; removing by polishing or etching, the altered layer from the back surface; forming a nickel film on the back surface of the semiconductor substrate after removing the altered layer; heat treating the nickel film to forming a nickel silicide layer by silicidation; and forming a metal electrode on a surface of the nickel silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.