Stable contact on one-sided gate tie-down structure
US9685340B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2015 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Jun 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After forming a first contact opening to expose a portion of a first source/drain contact located at one side of a functional gate structure followed by forming a second contact opening that intersects the first contact opening to expose the functional gate structure and a portion of a second source/drain contact located at an opposite side of the functional gate structure, the exposed portions of the first source/drain contact and the second-side source/drain contact are recessed. A dielectric cap is subsequently formed over the recessed portion of the second source/drain contact. A shared contact is formed in the first contact opening and the second contact opening to electrically connect a gate conductor of the functional gate structure to the first source/drain contact. The dielectric cap isolates the second source/drain contact from the shared contact, thus preventing contact shorts in a one-sided gate tie-down structure for 7 nm node and beyond.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.