Semiconductor device and method of manufacturing the same
US9685442B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2015 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Oct 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
A semiconductor device including an insulating film in a first region of a semiconductor substrate; a first impurity region and a second impurity region of a first conductivity type, each of the regions including a part located deeper than the insulating film in contact with each other, and the insulating film being sandwiched by the first and second impurity regions in planar view in the first region of the semiconductor substrate; a metal silicide film on the first impurity region and in Schottky junction with the first impurity region; a first impurity of the first impurity region having a peak of a concentration profile deeper than a bottom of the insulating film; a second impurity of the second impurity region having a concentration higher than a concentration of the first impurity in a part of the first impurity region shallower than the bottom of the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.