Image sensor with reduced spectral and optical crosstalk and method for making the image sensor
US9685472B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 23, 2016 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Feb 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/992
Abstract
An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer above the photodiode, a dielectric region above the antireflection layer and an optical filter to pass incident luminous radiation having a given wavelength. The antireflection layer may include an array of pads mutually separated by a dielectric material of the dielectric region. The array may be configured to allow simultaneous transmission of the incident luminous radiation and a diffraction of the incident luminous radiation producing diffracted radiations which have wavelengths below that of the incident radiation, and are attenuated with respect to the incident radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.