Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions
US9685509B2 · kind B2 · utility
1Cited by
30References
16Claims
0Family size
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Key dates
| Filing date | Mar 26, 2014 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Mar 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
A finFET device can include a high mobility semiconductor material in a fin structure that can provide a channel region for the finFET device. A source/drain recess can be adjacent to the fin structure and a graded composition epi-grown semiconductor alloy material, that includes a component of the high mobility semiconductor material, can be located in the source/drain recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.