Semiconductor device
US9685512B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2016 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Mar 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
Abstract
A semiconductor device includes a diode region and an IGBT region. The diode region includes a front side anode region, an n-type diode barrier region, an n-type diode pillar region reaching the diode barrier region through the front side anode region, and a p-type back side anode region separated from the front side anode region by the diode barrier region. The IGBT region includes a front side body region, an n-type IGBT barrier region, and a back side body region separated from the front side body region by the IGBT barrier region. When a gate-off voltage is applied to a gate electrode, a resistance between the IGBT barrier region and the emitter electrode is higher than a resistance between the diode barrier region and the anode electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.