Thin film activation method using electrical energy and thin film transistor fabrication method
US9685543B2 · kind B2 · utility
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1References
7Claims
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Key dates
| Filing date | Feb 26, 2016 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Feb 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02664
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The inventive concept relates to a thin film activation method, a thin film transistor fabrication method, and a substrate processing device, and more particularly, to a method of activating a thin film by using electrical energy, a method of fabricating a thin film transistor, and a device of processing a substrate. The thin film activation method according to an embodiment of the inventive concept may include supplying electrical energy to a thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.