Patent · US Active

Optoelectronic component with a layer structure

US9685589B2 · kind B2 · utility

0Cited by

1References

10Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Werner Bergbauer · Windberg, DE
Philipp Drechsel · Regensburg, DE
Peter Stauss · Regensburg, DE
Patrick Rode · Regensburg, DE

Key dates

Filing date	Sep 25, 2013
Grant date	Jun 20, 2017
Priority date	—
Expiry date	Oct 16, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/825
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.