Half bridge power conversion circuits using GaN devices
US9685869B1 · kind B1 · utility
28Cited by
24References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 23, 2016 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Nov 23, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.