Amplified dual-gate bio field effect transistor
US9689835B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | May 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/761
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity. An amplification factor of the BioFET device may be provided by a difference in capacitances associated with the gate structure on the first surface and with the interface layer formed on the second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.