Monolithic integration of GaN and InP components

US9691761B1 · kind B1 · utility

Assignee

• HRL Laboratories, LLC · US

Inventors

• Pamela R. Patterson · Los Angeles, US
• Keisuke Shinohara · Thousand Oaks, US
• Hasan Sharifi · Craydon Court, US
• Wonill Ha · Thousand Oaks, US
• Tahir Hussain · Calabasas, US
• James Chingwei Li · Simi Valley, US
• Dana C. Wheeler · Santa Monica, US

Key dates

• Filing date: Oct 26, 2016
• Grant date: Jun 27, 2017
• Expiry date: Oct 26, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/82
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A compound semiconductor integrated circuit comprising a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, said layer of a second material comprising a second electronic component.