Backside illuminated image sensor device having an oxide film and method of forming an oxide film of a backside illuminated image sensor device
US9691809B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2013 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | May 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
Disclosed is a method of fabricating an image sensor device, such as a BSI image sensor, and more particularly, a method of forming a dielectric film in a radiation-absorption region without using a conventional plasma etching causing roughness on the surface and non-uniformity within a die and a wafer. The method includes providing layers comprising a substrate having radiation sensors adjacent its front surface, an anti-reflective layer formed over the back surface of the substrate, a sacrificial dielectric layer formed over the anti-reflective layer, and a conductive layer formed over the sacrificial dielectric layer in a radiation-blocking region. The method further includes removing the sacrificial dielectric layer in the radiation-absorption region completely by a highly selective etching process and forming a dielectric film on the anti-reflective layer by deposition such as CVD or PVD while precisely controlling the thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.