Semiconductor device
US9691841B2 · kind B2 · utility
2Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2014 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Jun 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an insulating layer formed on a substrate, and a capacitor including first and second electrodes formed in the insulating layer, wherein a lower surface of the first electrode is formed to have a greater depth than a lower surface of the second electrode in the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.