Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition

US9691843B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Annalisa Cappellani · Portland, US
• Peter G. Tolchinsky · Beaverton, US
• Kelin J. Kuhn · Beaverton, US
• Glenn A. Glass · Portland, US
• Van H. Le · Portland, US

Key dates

• Filing date: Jan 14, 2016
• Grant date: Jun 27, 2017
• Expiry date: Jan 14, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition and methods to form such common-substrate devices are described. For example, a semiconductor structure includes a first semiconductor device having a first nanowire or semiconductor body disposed above a crystalline substrate. The first nanowire or semiconductor body is composed of a semiconductor material having a first global crystal orientation. The semiconductor structure also includes a second semiconductor device having a second nanowire or semiconductor body disposed above the crystalline substrate. The second nanowire or semiconductor body is composed of a semiconductor material having a second global crystal orientation different from the first global orientation. The second nanowire or semiconductor body is isolated from the crystalline substrate by an isolation pedestal disposed between the second nanowire or semiconductor body and the crystalline substrate.