Semiconductor device
US9691902B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2016 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Jan 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
Abstract
A semiconductor device includes a first pattern on a first active region, a second pattern on a second active region, and a third pattern on a third active region. The first pattern is spaced from the second pattern by a first interval corresponding to the width of a first recess between the first and second active regions. The second pattern is spaced from the third pattern by a second interval corresponding to the width of a second recess between the second and third active regions. The first, second, and third patterns includes gate patterns, and the first and second recesses include semiconductor material with a conductivity type different from the active regions. The semiconductor material in one recess extends higher than the semiconductor material in the other recess. The first, second, and third patterns have the same width, and the first and second recesses have different depths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.