Semiconductor device
US9691911B1 · kind B1 · utility
1Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2016 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Jan 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
A semiconductor device include a substrate, a first well region formed in the substrate, a first isolation structure formed in the first well region, a Schottky barrier structure formed on the first well region, and a plurality of assist structures formed on the first well region. The substrate includes a first conductivity type, the first well region includes a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other. The assist structures physically contact the first well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.